Multi-wavelength emitting InGaN/GaN quantum well grown on v-shaped GaN(1101) microfacet

Eun Sil Kang, Jin Woo Ju, Jin Soo Kim, Haeng Keun Ahn, June Key Lee, Jin Hyeok Kim, Dong Chan Shin, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


InGaN/GaN multiple quantum wells (MQWs) were successfully grown on the inclined GaN(1101) microfacets. Conventional photolithography and subsequent growth of GaN were employed to generate the V-shaped microfacets along (1120) direction. The well-developed microfacets observed by scanning electron microscopy and the clear transmission electron microscope interfacial images indicated that the MQW was successfully grown on the GaN microfacets. Interestingly, cathodoluminescence (CL) spectra measured on the microfacets showed a continuous change in the luminescence peak positions. The CL peaks were shifted to a longer wavelength from 420 nm to 440 nm as the probing points were changed along upward direction. This could be attributed to the nonuniform distribution of the In composition and/or the wavefunction overlapping between adjacent wells. Present works thus propose a novel route to fabricate a monolithic white light emitting diode without phosphors by growing the InGaN/GaN MQWs on (1101) facet.

Original languageEnglish
Pages (from-to)4053-4056
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number11
Publication statusPublished - 2007 Nov
Externally publishedYes


  • GaN
  • InGaN/GaN quantum well
  • Microfacet

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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