Multilevel programming at a low-voltage step using junction avalanche hot carrier injections

Ho Myoung An; Hee Dong Kim; Tae Geun Kim

doi:10.1063/1.3579247

Multilevel programming at a low-voltage step using junction avalanche hot carrier injections

Ho Myoung An, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A highly efficient program method is proposed for multilevel programming with a low-voltage step in a conventional polycrystalline silicon-oxide-nitride- oxide-silicon structure. This method uses junction avalanche hot carriers for charge storage in the nitride layer. A multilevel storage is easily obtained by using a low-voltage step of 0.1 V at each level of the three programmed states along with a fast program time of 1 μs. In addition, a localized charge-injection near the junction edge is clearly observed with an acceptable read margin and threshold voltage difference between the forward and the reverse read at the three programmed states.

Original language	English
Article number	153503
Journal	Applied Physics Letters
Volume	98
Issue number	15
DOIs	https://doi.org/10.1063/1.3579247
Publication status	Published - 2011 Apr 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3579247

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title = "Multilevel programming at a low-voltage step using junction avalanche hot carrier injections",

abstract = "A highly efficient program method is proposed for multilevel programming with a low-voltage step in a conventional polycrystalline silicon-oxide-nitride- oxide-silicon structure. This method uses junction avalanche hot carriers for charge storage in the nitride layer. A multilevel storage is easily obtained by using a low-voltage step of 0.1 V at each level of the three programmed states along with a fast program time of 1 μs. In addition, a localized charge-injection near the junction edge is clearly observed with an acceptable read margin and threshold voltage difference between the forward and the reverse read at the three programmed states.",

author = "An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the Seoul R&BD Program (Grant No. R1009391) and the Leading Foreign Research Institute Recruitment Program funded by the Ministry of Education, Science, and Technology (Grant No. 2010-00218). This work was also supported by the Samsung Semiconductor Research Center at Korea University.",

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Y1 - 2011/4/11

N2 - A highly efficient program method is proposed for multilevel programming with a low-voltage step in a conventional polycrystalline silicon-oxide-nitride- oxide-silicon structure. This method uses junction avalanche hot carriers for charge storage in the nitride layer. A multilevel storage is easily obtained by using a low-voltage step of 0.1 V at each level of the three programmed states along with a fast program time of 1 μs. In addition, a localized charge-injection near the junction edge is clearly observed with an acceptable read margin and threshold voltage difference between the forward and the reverse read at the three programmed states.

AB - A highly efficient program method is proposed for multilevel programming with a low-voltage step in a conventional polycrystalline silicon-oxide-nitride- oxide-silicon structure. This method uses junction avalanche hot carriers for charge storage in the nitride layer. A multilevel storage is easily obtained by using a low-voltage step of 0.1 V at each level of the three programmed states along with a fast program time of 1 μs. In addition, a localized charge-injection near the junction edge is clearly observed with an acceptable read margin and threshold voltage difference between the forward and the reverse read at the three programmed states.

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Multilevel programming at a low-voltage step using junction avalanche hot carrier injections

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