Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

Kyung Jae Lee; Kyoul Han; Sanghoon Lee; Xinyu Liu; M. Dobrowolska; Jacek K. Furdyna

doi:10.1063/9.0000523

Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

Kyung Jae Lee, Kyoul Han, Sanghoon Lee, Xinyu Liu, M. Dobrowolska, Jacek K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field does the major role for spin polarization of carriers causing SOT in the system. The volume fraction of SOT magnetization switching significantly depends on the magnitude and direction of the applied bias field. This feature leads to the realization of stable multilevel magnetic states in composition-graded (Ga,Mn)(As,P) film. The experiment demonstrates that multiple magnetic state can be robustly set by using appropriate bias fields. This characteristic can be used to realize SOT-driven multi-state memories and/or memristor devices, which are key ingredients for neuromorphic computing.

Original language	English
Article number	025122
Journal	AIP Advances
Volume	13
Issue number	2
DOIs	https://doi.org/10.1063/9.0000523
Publication status	Published - 2023 Feb 1

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) of Korea (2021R1A2C1003338); by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2022M3F3A2A03014536); by the NRF under the BK21 FOUR program at Korea University, Initiative for Science Frontiers on Upcoming Challenges; by Korea University Grant; and by National Science Foundation Grant DMR 1905277. Part of this study was performed using facilities at IBS Center for Correlated Electron Systems, Seoul National University.

Publisher Copyright:
© 2023 Author(s).

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film",

abstract = "We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field does the major role for spin polarization of carriers causing SOT in the system. The volume fraction of SOT magnetization switching significantly depends on the magnitude and direction of the applied bias field. This feature leads to the realization of stable multilevel magnetic states in composition-graded (Ga,Mn)(As,P) film. The experiment demonstrates that multiple magnetic state can be robustly set by using appropriate bias fields. This characteristic can be used to realize SOT-driven multi-state memories and/or memristor devices, which are key ingredients for neuromorphic computing.",

author = "Lee, {Kyung Jae} and Kyoul Han and Sanghoon Lee and Xinyu Liu and M. Dobrowolska and Furdyna, {Jacek K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) of Korea (2021R1A2C1003338); by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2022M3F3A2A03014536); by the NRF under the BK21 FOUR program at Korea University, Initiative for Science Frontiers on Upcoming Challenges; by Korea University Grant; and by National Science Foundation Grant DMR 1905277. Part of this study was performed using facilities at IBS Center for Correlated Electron Systems, Seoul National University. Publisher Copyright: {\textcopyright} 2023 Author(s).",

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AU - Lee, Kyung Jae

AU - Han, Kyoul

AU - Lee, Sanghoon

AU - Liu, Xinyu

AU - Dobrowolska, M.

AU - Furdyna, Jacek K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) of Korea (2021R1A2C1003338); by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (2022M3F3A2A03014536); by the NRF under the BK21 FOUR program at Korea University, Initiative for Science Frontiers on Upcoming Challenges; by Korea University Grant; and by National Science Foundation Grant DMR 1905277. Part of this study was performed using facilities at IBS Center for Correlated Electron Systems, Seoul National University. Publisher Copyright: © 2023 Author(s).

PY - 2023/2/1

Y1 - 2023/2/1

N2 - We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field does the major role for spin polarization of carriers causing SOT in the system. The volume fraction of SOT magnetization switching significantly depends on the magnitude and direction of the applied bias field. This feature leads to the realization of stable multilevel magnetic states in composition-graded (Ga,Mn)(As,P) film. The experiment demonstrates that multiple magnetic state can be robustly set by using appropriate bias fields. This characteristic can be used to realize SOT-driven multi-state memories and/or memristor devices, which are key ingredients for neuromorphic computing.

AB - We have studied spin-orbit torque (SOT) magnetization switching in a (Ga,Mn)(As,P) film with vertically-graded magnetic anisotropy. The magnetization switching chirality during current scans reveals that strain-induced Dresselhaus-type spin-orbit field does the major role for spin polarization of carriers causing SOT in the system. The volume fraction of SOT magnetization switching significantly depends on the magnitude and direction of the applied bias field. This feature leads to the realization of stable multilevel magnetic states in composition-graded (Ga,Mn)(As,P) film. The experiment demonstrates that multiple magnetic state can be robustly set by using appropriate bias fields. This characteristic can be used to realize SOT-driven multi-state memories and/or memristor devices, which are key ingredients for neuromorphic computing.

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Multilevel states driven by spin-orbit torque in a P-composition graded (Ga,Mn)(As,P) film

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