Multiple bit operation of MFISFET with Pt/SrBi2Ta 2O9/Y2O3/Si gate structure

Sun Il Shim, Young Suk Kwon, Ik Soo Kim, Seong Il Kim, Yong Tae Kim, Jung Ho Park

Research output: Contribution to journalArticlepeer-review


A single transistor type ferroelectric memory with multiple bit operation was presented. This cell has a metal ferroelectric insulator semiconductor field effect transistor structure. Y2O3 thin film was used as a buffer insulating layer to improve the memory characteristics and SrBi 2Ta2O9 was used as a ferroelectric gate material. The multi-level characteristics of four levels with one order of drain current difference were measured according to the writing voltage step of two volt. This multi-level memory cell enables to increase the density of memory in the same space and lower the cost.

Original languageEnglish
Pages (from-to)203-211
Number of pages9
JournalIntegrated Ferroelectrics
Publication statusPublished - 2004


  • Ferroelectric
  • FRAM
  • Multi-level
  • SBT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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