Large area applicable silicon nanowire (SiNW)-embedded Schottky solar cell (SC) is fabricated. Multiple semiconducting SiNWs were positioned on two different metals. SiNW forms a Schottky or an Ohmic contact to each metal according to the Fermi level lineup. Electrons or holes have a barrier to transport resulting in a rectifying flow. Under 1 sun illumination, the SiNW Schottky SC provided 0.167 V of photovoltage and 91.91 nA of photocurrent with an ideality factor of 1.2. It discusses the fabrication scheme and mechanism of multiple SiNWs-embedded Schottky SC.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from the Center for Nanoscale Mechatronics & Manufacturing (CNMM) of the 21C Frontier Research Program, National Research Foundation (NRF, 2009-0082018), and the Core project (NK-148C) at Korea Institute of Machinery and Materials (KIMM) by the Ministry of Education, Science and Technology (MEST) in Korea. Jeunghee Park is grateful for the financial support of a grant from the World Class University (WCU) program through the NRF (R31-10035). Joondong Kim and Ju-Hyung Yun contributed equally to this work.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)