TY - JOUR
T1 - Multiple Switching Modes of NiOxMemristors for Memory-Driven Multifunctional Device Applications
AU - Park, Young Ran
AU - Cho, Haein
AU - Wang, Gunuk
N1 - Funding Information:
This work was supported by National R&D Program through the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (nos. 2019R1A2C1005265, 2022R1A2C1005421, 2022R1A2B5B02001455, 2020M3F3A2A03082825, and 2022M3H4A1A01009656), the KU-KIST Graduate School Program of Korea University, a Korea University Future Research Grant, and the KIST Institutional Program (2V09130-21-P036).
Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.
PY - 2022/7/26
Y1 - 2022/7/26
N2 - Multiple building components with a variety of switching capabilities are required to implement memory-driven parallel computing architecture and multifunctional device applications. In this regard, there is a high demand for implementing multiple switching modes based on only one active material in a simple device form. In this study, we demonstrated the ability of a solution-processable two-terminal Ag (or Al)/NiOx/ITO memristor that exhibits triple-switching characteristics depending on the different voltage regimes. Notably, the device exhibits an analog bipolar switching behavior under a low programming voltage (≤1.0 V), enabling essential synaptic functions, as well as a high recognition accuracy of 87.42% in a single-layer neural network. After the electroforming process to form the oxygen vacancy-based conductive filament in the NiOxlayer, the device concurrently exhibited digital bipolar switching and unipolar threshold switching behaviors at different voltage regimes without compliance current. These three switching characteristics are related to the transition of dominant switching mechanisms depending on the operating scheme, which is investigated using various material and chemical characterization techniques during switching, including cross-sectional scanning transmission electron microscopy, atomic force microscopy, ultraviolet photoelectron spectroscopy, and X-ray photoelectron spectroscopy.
AB - Multiple building components with a variety of switching capabilities are required to implement memory-driven parallel computing architecture and multifunctional device applications. In this regard, there is a high demand for implementing multiple switching modes based on only one active material in a simple device form. In this study, we demonstrated the ability of a solution-processable two-terminal Ag (or Al)/NiOx/ITO memristor that exhibits triple-switching characteristics depending on the different voltage regimes. Notably, the device exhibits an analog bipolar switching behavior under a low programming voltage (≤1.0 V), enabling essential synaptic functions, as well as a high recognition accuracy of 87.42% in a single-layer neural network. After the electroforming process to form the oxygen vacancy-based conductive filament in the NiOxlayer, the device concurrently exhibited digital bipolar switching and unipolar threshold switching behaviors at different voltage regimes without compliance current. These three switching characteristics are related to the transition of dominant switching mechanisms depending on the operating scheme, which is investigated using various material and chemical characterization techniques during switching, including cross-sectional scanning transmission electron microscopy, atomic force microscopy, ultraviolet photoelectron spectroscopy, and X-ray photoelectron spectroscopy.
KW - analog bipolar switching
KW - digital bipolar switching
KW - NiOmemristor
KW - synaptic functions
KW - unipolar threshold switching
UR - http://www.scopus.com/inward/record.url?scp=85136079642&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.2c00780
DO - 10.1021/acsaelm.2c00780
M3 - Article
AN - SCOPUS:85136079642
SN - 2637-6113
VL - 4
SP - 3739
EP - 3748
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 7
ER -