Multislot transmission lines and microwave phase shifters based on (Ba,Sr)TiO3 films

I. G. Mironenko; A. A. Semenov; A. A. Ivanov; P. J. Beljavski; Chong Yun Kang; S. F. Karmanenko

doi:10.1080/10584580802086573

Multislot transmission lines and microwave phase shifters based on (Ba,Sr)TiO3 films

I. G. Mironenko, A. A. Semenov, A. A. Ivanov, P. J. Beljavski, Chong Yun Kang, S. F. Karmanenko

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Microwave slot and coplanar transmission lines formed on a surface of ferroelectric films grown on dielectric substrates are used for various microwave devices with electrically tunable amplitude and phase frequency characteristics. The electric field intensity, which is required for the effective modulation of dielectric permittivity of the ferroelectric film is varied between 10 and 15 V/micron. Therefore rather narrow gaps with width no more than 10 microns can provide necessary electric field at bias voltage no more than 100 V. In this case the attenuation of the electromagnetic slot mode is considerably increased, so the implementation of such devices has no a sense.

Original language	English
Pages (from-to)	58-66
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	97
Issue number	1
DOIs	https://doi.org/10.1080/10584580802086573
Publication status	Published - 2008

Keywords

Ferroelectric film
Multislot transmission line
Phase shifter

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580802086573

Cite this

@article{ecdcf6796c284cbaa23da1d647fd9bf1,

title = "Multislot transmission lines and microwave phase shifters based on (Ba,Sr)TiO3 films",

abstract = "Microwave slot and coplanar transmission lines formed on a surface of ferroelectric films grown on dielectric substrates are used for various microwave devices with electrically tunable amplitude and phase frequency characteristics. The electric field intensity, which is required for the effective modulation of dielectric permittivity of the ferroelectric film is varied between 10 and 15 V/micron. Therefore rather narrow gaps with width no more than 10 microns can provide necessary electric field at bias voltage no more than 100 V. In this case the attenuation of the electromagnetic slot mode is considerably increased, so the implementation of such devices has no a sense.",

keywords = "Ferroelectric film, Multislot transmission line, Phase shifter",

author = "Mironenko, {I. G.} and Semenov, {A. A.} and Ivanov, {A. A.} and Beljavski, {P. J.} and Kang, {Chong Yun} and Karmanenko, {S. F.}",

year = "2008",

doi = "10.1080/10584580802086573",

language = "English",

volume = "97",

pages = "58--66",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

}

TY - JOUR

T1 - Multislot transmission lines and microwave phase shifters based on (Ba,Sr)TiO3 films

AU - Mironenko, I. G.

AU - Semenov, A. A.

AU - Ivanov, A. A.

AU - Beljavski, P. J.

AU - Kang, Chong Yun

AU - Karmanenko, S. F.

PY - 2008

Y1 - 2008

N2 - Microwave slot and coplanar transmission lines formed on a surface of ferroelectric films grown on dielectric substrates are used for various microwave devices with electrically tunable amplitude and phase frequency characteristics. The electric field intensity, which is required for the effective modulation of dielectric permittivity of the ferroelectric film is varied between 10 and 15 V/micron. Therefore rather narrow gaps with width no more than 10 microns can provide necessary electric field at bias voltage no more than 100 V. In this case the attenuation of the electromagnetic slot mode is considerably increased, so the implementation of such devices has no a sense.

AB - Microwave slot and coplanar transmission lines formed on a surface of ferroelectric films grown on dielectric substrates are used for various microwave devices with electrically tunable amplitude and phase frequency characteristics. The electric field intensity, which is required for the effective modulation of dielectric permittivity of the ferroelectric film is varied between 10 and 15 V/micron. Therefore rather narrow gaps with width no more than 10 microns can provide necessary electric field at bias voltage no more than 100 V. In this case the attenuation of the electromagnetic slot mode is considerably increased, so the implementation of such devices has no a sense.

KW - Ferroelectric film

KW - Multislot transmission line

KW - Phase shifter

UR - http://www.scopus.com/inward/record.url?scp=66149147820&partnerID=8YFLogxK

U2 - 10.1080/10584580802086573

DO - 10.1080/10584580802086573

M3 - Article

AN - SCOPUS:66149147820

SN - 1058-4587

VL - 97

SP - 58

EP - 66

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

ER -

Multislot transmission lines and microwave phase shifters based on (Ba,Sr)TiO3 films

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this