TY - JOUR
T1 - N-channel thin-film transistors constructed on plastic by solution processes of HgSe nanocrystals
AU - Jang, Jaewon
AU - Cho, Kyoungah
AU - Yun, Junggwon
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported by National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), “SystemIC2010” project of Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), and the Nano R&D Program (M10703000980-07M0300-98010).
Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/10
Y1 - 2009/10
N2 - We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.
AB - We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.
KW - Flexible device
KW - HgSe nanocrystals
KW - Thin-film transistor
KW - UV/ozone treatment
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U2 - 10.1016/j.mee.2009.01.027
DO - 10.1016/j.mee.2009.01.027
M3 - Article
AN - SCOPUS:67649998638
SN - 0167-9317
VL - 86
SP - 2030
EP - 2033
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 10
ER -