N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition

Qian Sun, Yong Suk Cho, Bo Hyun Kong, Hyung Koun Cho, Tsung Shine Ko, Christopher D. Yerino, In Hwan Lee, Jung Han

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53 Citations (Scopus)


In this work, we report the growth of smooth, high-quality N-face GaN on c-plane sapphire by metalorganic chemical vapor deposition. It is found that the nitridation temperature of sapphire has a critical effect on the surface morphology of N-face GaN. Sapphire after a severe nitridation gives rise to a high density of hexagonal hillocks during N-face GaN growth. Smooth N-face GaN has been grown on appropriately nitridized sapphire. The N-polarity of the GaN film has been confirmed with no inversion domain by convergent beam electron diffraction. Controlled growth interruption is carried out to study the nucleation evolution during N-face GaN growth, which is found distinctly different from the two-step growth of Ga-face GaN. Atomically smooth N-face GaN has been achieved with comparable structural quality to Ga-face GaN.

Original languageEnglish
Pages (from-to)2948-2952
Number of pages5
JournalJournal of Crystal Growth
Issue number10
Publication statusPublished - 2009 May 1
Externally publishedYes

Bibliographical note

Funding Information:
This work is supported by the United States Department of Energy under contract DE-FC26-07NT43227.


  • A1. N-face
  • A1. Nitridation
  • A1. Nucleation evolution
  • A1. X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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