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N-type graphene induced by dissociative H
2
adsorption at room temperature
Byung Hoon Kim
, Sung Ju Hong
, Seung Jae Baek
, Hu Young Jeong
, Noejung Park
, Muyoung Lee
, Sang Wook Lee
, Min Park
, Seung Wan Chu
, Hyeon Suk Shin
, Jeongmin Lim
, Jeong Chul Lee
,
Yongseok Jun
*
, Yung Woo Park
*
Corresponding author for this work
Research output
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Contribution to journal
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Article
›
peer-review
62
Citations (Scopus)
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2
adsorption at room temperature'. Together they form a unique fingerprint.
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Keyphrases
Room Temperature
100%
Graphene
100%
H2 Adsorption
100%
Bilayer Graphene
40%
Device Application
20%
Voltage Dependence
20%
Gate Voltage
20%
DSPACE
20%
H2 Gas
20%
Interlayer Distance
20%
Hydrogen Storage Materials
20%
Gas Pressure
20%
Negative Gate Voltage
20%
Vacancy Defects
20%
Point-shift
20%
Molecular Hydrogen
20%
Charge Neutrality Point
20%
Signature Change
20%
Bilayer Graphene Sheets
20%
Electronic Structure of Graphene
20%
Raman Signature
20%
Physics
Room Temperature
100%
Graphene
100%
Hydrogen Storage
12%
Gas Pressure
12%
Vacancy Defect
12%
Energy Levels
12%
Material Science
Graphene
100%
Multilayer
25%
Hydrogen Storage Material
12%
Vacancy Defect
12%
Energy Levels
12%