Abstract
Ferroelectric (Na,K)NbO3 (NKN) thin films have been synthesized using metalorganic chemical vapor deposition (MOCVD) technique for the first time. The films were deposited on various substrates in a horizontal hot-wall reactor using tetramethyl-heptanedionate (THD) precursors. Epitaxial films have been prepared on SrTiO3 (001) substrates, while nearly perfect [001]-axis oriented polycrystalline thin films have been deposited on SiO 2/Si, SiNx/Si, and sapphire substrates. Electron Spectroscopy for Chemical Analysis (ESCA) analysis indicated that Na, K, Nb, and O are the primary elements present in the film. Dielectric spectroscopy for NKN films on SiO2/Si substrates showed dielectric permittivity ε′ about 140 and loss tan δ less than 2 % in the frequency range from 1 kHz to 120 kHz.
| Original language | English |
|---|---|
| Pages (from-to) | 39-48 |
| Number of pages | 10 |
| Journal | Integrated Ferroelectrics |
| Volume | 45 |
| DOIs | |
| Publication status | Published - 2002 |
Keywords
- (Na,K)NbO thin film
- Ferroelectrics
- Metalorganic chemical vapor deposition (MOCVD)
- Preferential orientation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry