Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

Byoungjun Park; Kyoungah Cho; Sungsu Kim; Sangsig Kim

doi:10.1016/j.solidstatesciences.2010.08.008

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO ₂ tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm²/V s, about 10⁶, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.

Original language	English
Pages (from-to)	1966-1969
Number of pages	4
Journal	Solid State Sciences
Volume	12
Issue number	12
DOIs	https://doi.org/10.1016/j.solidstatesciences.2010.08.008
Publication status	Published - 2010 Dec

Bibliographical note

Funding Information:
This work was supported by the Hynix-Korea University Nano-Semiconductor Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy , the Nano R&D Program ( M10703000980 - 08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology ( Korea Science and Engineering Foundation ).

Keywords

Aluminum
Memory
Nanoparticle
ZnO

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.solidstatesciences.2010.08.008

Cite this

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title = "Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles",

abstract = "In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.",

keywords = "Aluminum, Memory, Nanoparticle, ZnO",

author = "Byoungjun Park and Kyoungah Cho and Sungsu Kim and Sangsig Kim",

note = "Funding Information: This work was supported by the Hynix-Korea University Nano-Semiconductor Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy , the Nano R&D Program ( M10703000980 - 08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology ( Korea Science and Engineering Foundation ). ",

year = "2010",

month = dec,

doi = "10.1016/j.solidstatesciences.2010.08.008",

language = "English",

volume = "12",

pages = "1966--1969",

journal = "Solid State Sciences",

issn = "1293-2558",

publisher = "Elsevier Masson s.r.l.",

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T1 - Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Sungsu

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Hynix-Korea University Nano-Semiconductor Program, the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy , the Nano R&D Program ( M10703000980 - 08M0300-98010 ), and World Class University (WCU, R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology ( Korea Science and Engineering Foundation ).

PY - 2010/12

Y1 - 2010/12

N2 - In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.

AB - In this study, nonvolatile nano-floating gate memory devices were fabricated based on ZnO films and Al nanoparticles and their electrical properties were investigated. Al nanoparticles were embedded in between SiO 2 tunneling and control oxide layers deposited on ZnO channels, and these nanoparticles acted as floating gate nodes in the devices. Their electron mobility, on/off ratio, and threshold voltage shift were estimated to be 9.42 cm2/V s, about 106, and 4.2 V, respectively. Their programming/erasing, endurance and retention were also characterized. Especially, the low-temperature processes applied in this work indicate that integrated electronic devices can be fabricated on temperature-sensitive substrates.

KW - Aluminum

KW - Memory

KW - Nanoparticle

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=78649317609&partnerID=8YFLogxK

U2 - 10.1016/j.solidstatesciences.2010.08.008

DO - 10.1016/j.solidstatesciences.2010.08.008

M3 - Article

AN - SCOPUS:78649317609

SN - 1293-2558

VL - 12

SP - 1966

EP - 1969

JO - Solid State Sciences

JF - Solid State Sciences

IS - 12

ER -

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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