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Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles
Byoungjun Park
, Kyoungah Cho
, Sungsu Kim
,
Sangsig Kim
Research output
:
Contribution to journal
›
Article
›
peer-review
8
Citations (Scopus)
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Keyphrases
Memory-based
100%
Al Nanoparticles
100%
Nano-floating Gate Memory
100%
ZnO Thin Film Transistor
100%
Electrical Properties
33%
Silica
33%
Nanoparticles
33%
Memory Device
33%
Non-volatile
33%
Tunneling
33%
ZnO Film
33%
Oxide Layer
33%
Electronic Devices
33%
Low Temperature Process
33%
Temperature Sensitivity
33%
Electron Mobility
33%
Threshold Voltage Shift
33%
Floating Gate
33%
Integrated Electronics
33%
Sensitive Substrate
33%
Material Science
ZnO
100%
Nanoparticle
100%
Thin-Film Transistor
100%
Oxide Compound
25%
Film
25%
Electron Mobility
25%