Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Byoungjun Park; Kyoungah Cho; Sungsu Kim; Sangsig Kim

doi:10.1007/s11671-010-9789-5

Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm²/V·s and their on/off ratio was in the range of 10⁴-10⁵. The threshold voltages of the programmed and erased states were negligibly changed up to 10³ cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Original language	English
Article number	41
Pages (from-to)	1-4
Number of pages	4
Journal	Nanoscale Research Letters
Volume	6
Issue number	1
DOIs	https://doi.org/10.1007/s11671-010-9789-5
Publication status	Published - 2011 Jan

Keywords

Flexible devices
Low temperature
Nanoparticles
Non-volatile memory
Thin-film transistors

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1007/s11671-010-9789-5

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title = "Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics",

abstract = "Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm2/V·s and their on/off ratio was in the range of 104-105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.",

keywords = "Flexible devices, Low temperature, Nanoparticles, Non-volatile memory, Thin-film transistors",

author = "Byoungjun Park and Kyoungah Cho and Sungsu Kim and Sangsig Kim",

note = "Funding Information: This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], Industry and Energy, the Nano R&D Program (M10703000980-08M0300-98010), and World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).",

year = "2011",

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doi = "10.1007/s11671-010-9789-5",

language = "English",

volume = "6",

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AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Sungsu

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], Industry and Energy, the Nano R&D Program (M10703000980-08M0300-98010), and World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).

PY - 2011/1

Y1 - 2011/1

N2 - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm2/V·s and their on/off ratio was in the range of 104-105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

AB - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm2/V·s and their on/off ratio was in the range of 104-105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

KW - Flexible devices

KW - Low temperature

KW - Nanoparticles

KW - Non-volatile memory

KW - Thin-film transistors

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Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Abstract

Keywords

ASJC Scopus subject areas

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