Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0. 18 cm2/V·s and their on/off ratio was in the range of 104-105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Original languageEnglish
Article number41
Pages (from-to)1-4
Number of pages4
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2011 Jan

Bibliographical note

Funding Information:
This work was partly supported by the IT R&D program of MKE/KEIT [10030559, Development of next generation high performance organic/nano materials and printing process technology], Industry and Energy, the Nano R&D Program (M10703000980-08M0300-98010), and World Class University (WCU, R32-2008-000-10082-0) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation).


  • Flexible devices
  • Low temperature
  • Nanoparticles
  • Non-volatile memory
  • Thin-film transistors

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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