Nano-floating gate memory devices composed of ZnO thin-film transistors on flexible plastics

Byoungjun Park; Kyoungah Cho; Sungsu Kim; Sangsig Kim

doi:10.1186/1556-276X-7-41

Nano-floating gate memory devices composed of ZnO thin-film transistors on flexible plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm ²/V·s and their on/off ratio was in the range of 10 ⁴-10 ⁵. The threshold voltages of the programmed and erased states were negligibly changed up to 10 ³ cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Original language	English
Article number	41
Pages (from-to)	1-4
Number of pages	4
Journal	Nanoscale Research Letters
Volume	7
DOIs	https://doi.org/10.1186/1556-276X-7-41
Publication status	Published - 2012

Bibliographical note

Funding Information:
This work was supported by the National Science Council of Taiwan through grant numbers 96-2119-M-390-001, 97-2112-M-390-003, and 98-2112-M-390-003.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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abstract = "Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.",

author = "Byoungjun Park and Kyoungah Cho and Sungsu Kim and Sangsig Kim",

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AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Sungsu

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the National Science Council of Taiwan through grant numbers 96-2119-M-390-001, 97-2112-M-390-003, and 98-2112-M-390-003.

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Y1 - 2012

N2 - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

AB - Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

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Nano-floating gate memory devices composed of ZnO thin-film transistors on flexible plastics

Abstract

Bibliographical note

ASJC Scopus subject areas

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