Abstract
Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.
Original language | English |
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Article number | 41 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Nanoscale Research Letters |
Volume | 7 |
DOIs | |
Publication status | Published - 2012 |
Bibliographical note
Funding Information:This work was supported by the National Science Council of Taiwan through grant numbers 96-2119-M-390-001, 97-2112-M-390-003, and 98-2112-M-390-003.
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics