Nano-floating gate memory devices composed of ZnO thin-film transistors on flexible plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm 2/V·s and their on/off ratio was in the range of 10 4-10 5. The threshold voltages of the programmed and erased states were negligibly changed up to 10 3 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Original languageEnglish
Article number41
Pages (from-to)1-4
Number of pages4
JournalNanoscale Research Letters
Publication statusPublished - 2012

Bibliographical note

Funding Information:
This work was supported by the National Science Council of Taiwan through grant numbers 96-2119-M-390-001, 97-2112-M-390-003, and 98-2112-M-390-003.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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