Nano plasmon device fabrications using dielectrophoretic (DEP) force

J. Kim; C. M. Kang; S. Kim; J. K. F. Suh; H. J. Shin; J. H. Park

doi:10.1117/12.2024637

Nano plasmon device fabrications using dielectrophoretic (DEP) force

J. Kim, C. M. Kang, S. Kim, J. K. F. Suh, H. J. Shin, J. H. Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and -QD on nanowire' nanostructure was formed as a practical plasmonic device using DEP force.

Original language	English
Title of host publication	Nanoengineering
Subtitle of host publication	Fabrication, Properties, Optics, and Devices X
DOIs	https://doi.org/10.1117/12.2024637
Publication status	Published - 2013
Event	Nanoengineering: Fabrication, Properties, Optics, and Devices X - San Diego, CA, United States Duration: 2013 Aug 27 → 2013 Aug 29

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8816
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Nanoengineering: Fabrication, Properties, Optics, and Devices X
Country/Territory	United States
City	San Diego, CA
Period	13/8/27 → 13/8/29

Keywords

Metal Nanowire
Quantum Dot
Single Photon Source
Surface Plasmon Resonance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2024637

Cite this

Kim, J, Kang, CM, Kim, S, F. Suh, JK, Shin, HJ & Park, JH 2013, Nano plasmon device fabrications using dielectrophoretic (DEP) force. in Nanoengineering: Fabrication, Properties, Optics, and Devices X., 88160X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8816, Nanoengineering: Fabrication, Properties, Optics, and Devices X, San Diego, CA, United States, 13/8/27. https://doi.org/10.1117/12.2024637

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title = "Nano plasmon device fabrications using dielectrophoretic (DEP) force",

abstract = "We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and -QD on nanowire' nanostructure was formed as a practical plasmonic device using DEP force.",

keywords = "Metal Nanowire, Quantum Dot, Single Photon Source, Surface Plasmon Resonance",

author = "J. Kim and Kang, {C. M.} and S. Kim and {F. Suh}, {J. K.} and Shin, {H. J.} and Park, {J. H.}",

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AU - Kim, J.

AU - Kang, C. M.

AU - Kim, S.

AU - F. Suh, J. K.

AU - Shin, H. J.

AU - Park, J. H.

PY - 2013

Y1 - 2013

N2 - We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and -QD on nanowire' nanostructure was formed as a practical plasmonic device using DEP force.

AB - We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and -QD on nanowire' nanostructure was formed as a practical plasmonic device using DEP force.

KW - Metal Nanowire

KW - Quantum Dot

KW - Single Photon Source

KW - Surface Plasmon Resonance

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DO - 10.1117/12.2024637

M3 - Conference contribution

AN - SCOPUS:84886713594

SN - 9780819496669

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Nanoengineering

T2 - Nanoengineering: Fabrication, Properties, Optics, and Devices X

Y2 - 27 August 2013 through 29 August 2013

ER -

Nano plasmon device fabrications using dielectrophoretic (DEP) force

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