Nanocrystalline GaZnO films for transparent electrode to silicon carbide

Nanocrystalline 2% Ga doped zinc oxide (GaZnO) thin films were epitaxially deposited on n-type 4H-SiC (0001) by a pulsed laser deposition (PLD) at different substrate temperatures of 250, 400, and 550 °C, respectively. Structural and electrical properties of nanocrystalline GaZnO thin film on 4H-SiC were investigated by using X-ray diffraction, atomic force microscopy (AFM), Hall effect measurement, transmission line method (TLM), and Auger electron spectroscopy (AES). The nanocrystalline GaZnO film deposited at 400 °C show the lowest resistivity of 3.3×10 ^-4 Ωcm, and highly c-axis oriented crystalline quality with being sharper and higher diffraction angle, which result in. The specific contact resistance (ρ _c), measured from the Au/Ti/GaZnO/SiC of ∼0.05 Ω cm ². The relative amount of activated Ga ³⁺ ions was 2.02% in GaZnO film by AES measurement.