Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

J. C. Sohn; D. J. Byun; S. H. Lim

doi:10.1016/j.jmmm.2003.12.1009

Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

J. C. Sohn, D. J. Byun, S. H. Lim

Research output: Contribution to journal › Conference article › peer-review

31 Citations (Scopus)

Abstract

Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O₂ atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πM_S) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

Original language	English
Pages (from-to)	1500-1502
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	272-276
DOIs	https://doi.org/10.1016/j.jmmm.2003.12.1009
Publication status	Published - 2004 May
Event	Proceedings of the International Conference on Magnetism - Rome, Italy Duration: 2003 Jul 27 → 2003 Aug 1

Bibliographical note

Funding Information:
Financial support from the KIST Vision 21 program and the Research Center of Advanced Magnetic Materials at CNU is gratefully acknowledged.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

Keywords

Co-Fe-Al-O nanogranular film
Ferromagnetic resonance frequency
Magnetoelastic device
Magnetostriction

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2003.12.1009

Cite this

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title = "Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range",

abstract = "Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.",

keywords = "Co-Fe-Al-O nanogranular film, Ferromagnetic resonance frequency, Magnetoelastic device, Magnetostriction",

author = "Sohn, {J. C.} and Byun, {D. J.} and Lim, {S. H.}",

note = "Funding Information: Financial support from the KIST Vision 21 program and the Research Center of Advanced Magnetic Materials at CNU is gratefully acknowledged. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.; Proceedings of the International Conference on Magnetism ; Conference date: 27-07-2003 Through 01-08-2003",

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month = may,

doi = "10.1016/j.jmmm.2003.12.1009",

language = "English",

volume = "272-276",

pages = "1500--1502",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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T1 - Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

AU - Sohn, J. C.

AU - Byun, D. J.

AU - Lim, S. H.

N1 - Funding Information: Financial support from the KIST Vision 21 program and the Research Center of Advanced Magnetic Materials at CNU is gratefully acknowledged. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2004/5

Y1 - 2004/5

N2 - Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

AB - Co-Fe-Al-O nanogranular thin films for magnetoelastic device applications in the GHz frequency range are fabricated by RF-magnetron sputtering under an Ar+O2 atmosphere. A very large resistivity up to 400μΩcm, a saturation magnetization (4πMS) of 16kG and an anisotropy field of 45Oe are consistently obtained, resulting in excellent high-frequency magnetic properties, such as a high ferromagnetic resonance frequency of 2.3GHz combined with a large real part of permeability of 315. A saturation magnetostriction of 45ppm is achieved at a magnetic field as low as 20Oe.

KW - Co-Fe-Al-O nanogranular film

KW - Ferromagnetic resonance frequency

KW - Magnetoelastic device

KW - Magnetostriction

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U2 - 10.1016/j.jmmm.2003.12.1009

DO - 10.1016/j.jmmm.2003.12.1009

M3 - Conference article

AN - SCOPUS:2642575167

SN - 0304-8853

VL - 272-276

SP - 1500

EP - 1502

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

T2 - Proceedings of the International Conference on Magnetism

Y2 - 27 July 2003 through 1 August 2003

ER -

Nanogranular Co-Fe-Al-O sputtered thin films for magnetoelastic device applications in the GHz frequency range

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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