Nanoparticle-based flexible inverters with a vertical structure

Junggwon Yun; Kyoungah Cho; Sangsig Kim

doi:10.1016/j.tsf.2013.04.147

Nanoparticle-based flexible inverters with a vertical structure

Junggwon Yun, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain.

Original language	English
Pages (from-to)	256-259
Number of pages	4
Journal	Thin Solid Films
Volume	539
DOIs	https://doi.org/10.1016/j.tsf.2013.04.147
Publication status	Published - 2013 Jul 31

Bibliographical note

Funding Information:
This work was supported by the Nano R&D Program ( M10703000980 - 08M0300-98010 ) and World Class University (WCU , R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation) .

Keywords

Electronic circuits
Flexible substrate
II-VI semiconductors
Nanocrystals

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.04.147

Cite this

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title = "Nanoparticle-based flexible inverters with a vertical structure",

abstract = "We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain.",

keywords = "Electronic circuits, Flexible substrate, II-VI semiconductors, Nanocrystals",

author = "Junggwon Yun and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: This work was supported by the Nano R&D Program ( M10703000980 - 08M0300-98010 ) and World Class University (WCU , R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation) . ",

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AU - Yun, Junggwon

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the Nano R&D Program ( M10703000980 - 08M0300-98010 ) and World Class University (WCU , R32-2008-000-10082-0 ) Project of the Ministry of Education, Science and Technology (Korea Science and Engineering Foundation) .

PY - 2013/7/31

Y1 - 2013/7/31

N2 - We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain.

AB - We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain.

KW - Electronic circuits

KW - Flexible substrate

KW - II-VI semiconductors

KW - Nanocrystals

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DO - 10.1016/j.tsf.2013.04.147

M3 - Article

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SN - 0040-6090

VL - 539

SP - 256

EP - 259

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Nanoparticle-based flexible inverters with a vertical structure

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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