Abstract
We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10 -5-10 -6 Ωcm 2 when annealed at temperatures of 330-530°C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.
Original language | English |
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Pages (from-to) | 3547-3550 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 6 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2006 Nov |
Keywords
- GaN
- Light emitting diode
- Nanoparticle
- Ohmic contacts
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics