Abstract
InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.
Original language | English |
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Pages (from-to) | 17688-17692 |
Number of pages | 5 |
Journal | Journal of Materials Chemistry |
Volume | 21 |
Issue number | 44 |
DOIs | |
Publication status | Published - 2011 Nov 28 |
Externally published | Yes |
ASJC Scopus subject areas
- General Chemistry
- Materials Chemistry