Nanopillar InGaN/GaN light emitting diodes integrated with homogeneous multilayer graphene electrodes

InGaN/GaN nanopillar light-emitting diodes (LEDs) were fabricated using a highly homogeneous multilayer graphene (h-MLG) electrode. Four layers of h-MLG were prepared homogeneously using chemical vapor deposition and layer-by-layer transfer methods. The h-MLG exhibited excellent optical, structural and electrical properties for use as an electrode in the LEDs. The h-MLG was applied as a transparent top electrode by suspending only on the tip of nanopillar LEDs. The current-driven InGaN/GaN nanopillar LED with the h-MLG electrode was successfully operated at a high current injection and exhibited bright electroluminescence.