Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

H. S. Jeon; C. W. Cho; C. H. Lim; B. Park; H. Ju; S. Kim; S. B. Lee

doi:10.1116/1.2375083

Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

H. S. Jeon, C. W. Cho, C. H. Lim, B. Park, H. Ju, S. Kim, S. B. Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.

Original language	English
Pages (from-to)	3192-3195
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	6
DOIs	https://doi.org/10.1116/1.2375083
Publication status	Published - 2006

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires",

abstract = "Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.",

author = "Jeon, {H. S.} and Cho, {C. W.} and Lim, {C. H.} and B. Park and H. Ju and S. Kim and Lee, {S. B.}",

note = "Funding Information: This work was supported by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development sponsored by the Ministry of Commerce, Industry and Energy and in part by the Ministry of Science and Technology through the Cavendish-KAIST joint research program and the second stage BK21 Program of the Ministry of Education and Human Resources Development.",

year = "2006",

doi = "10.1116/1.2375083",

language = "English",

volume = "24",

pages = "3192--3195",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

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TY - JOUR

T1 - Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

AU - Jeon, H. S.

AU - Cho, C. W.

AU - Lim, C. H.

AU - Park, B.

AU - Ju, H.

AU - Kim, S.

AU - Lee, S. B.

N1 - Funding Information: This work was supported by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development sponsored by the Ministry of Commerce, Industry and Energy and in part by the Ministry of Science and Technology through the Cavendish-KAIST joint research program and the second stage BK21 Program of the Ministry of Education and Human Resources Development.

PY - 2006

Y1 - 2006

N2 - Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.

AB - Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.

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U2 - 10.1116/1.2375083

DO - 10.1116/1.2375083

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

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ER -

Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires

Abstract

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