Abstract
Nanoscale floating-gate characteristics of colloidal Au nanoparticles electrostatically assembled on Si nanowires have been investigated. Colloidal Au nanoparticles with ∼5 nm diameters were selectively deposited onto the lithographically defined n -type Si nanowire surface by 2 min electrophoresis between the channel and the side gates. The device transfer characteristics measured at room temperature showed hysteresis, with the depletion mode cutoff voltage applied by the side gates shifted by as much as 1.5 V, with the source-drain bias at 1.4 V. The results demonstrate that the electrostatic assembly of colloidal Au nanoparticles is a useful method for the fabrication of Si nanowire based nanoscale floating-gate nonvolatile memory structures.
| Original language | English |
|---|---|
| Pages (from-to) | 3192-3195 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 24 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2006 |
Bibliographical note
Funding Information:This work was supported by the National Research Program for the 0.1-Terabit Nonvolatile Memory Development sponsored by the Ministry of Commerce, Industry and Energy and in part by the Ministry of Science and Technology through the Cavendish-KAIST joint research program and the second stage BK21 Program of the Ministry of Education and Human Resources Development.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering