Abstract
Electroluminescence (EL) was obtained from a p-Si (100) thin film / nanostructured n-ZnO heterojunction diode fabricated by a simple dielectrophoresis (DEP) method. The Si substrate was pre-patterned with electrodes and an insulating separation layer by a standard photolithographic process. ZnO nanostructures were formed by a simple solution chemistry and subsequently transferred to the pre-patterned substrate. Application of the DEP force at a frequency of 100 kHz and 6 V peak-to-peak voltage allowed precise positioning of the ZnO nanostructures at the edge of the metal electrodes. The physically formed p-Si (100) thin film/ nanostructured n-ZnO heterojunction displayed multi-color emission from the ZnO near band edge as well as emission from defective states within the ZnO band gap.
Original language | English |
---|---|
Pages (from-to) | 26006-26010 |
Number of pages | 5 |
Journal | Optics Express |
Volume | 19 |
Issue number | 27 |
DOIs | |
Publication status | Published - 2011 Dec 19 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics