Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this paper, we propose a novel construction of silicon nanowire (SiNW) negative-AND (NAND) logic gates on bendable plastic substrates and describe their electrical characteristics. The NAND logic gates with SiNW channels are capable of operating with a supply voltage as low as 0.8 V, with switching and standby power consumption of approximately 1.1 and 0.068 nW, respectively. Superior electrical characteristics of each SiNW transistor, including steep subthreshold slopes, high Ion/off ratio, and symmetrical threshold voltages, are the major factors that enable nanowatt-range power operation of the logic gates. Moreover, the mechanical bendability of the logic gates indicates that they have good and stable fatigue properties. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)3656-3662
Number of pages7
JournalNano Research
Issue number12
Publication statusPublished - 2016 Dec 1

Bibliographical note

Publisher Copyright:
© 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.


  • bendable electronics
  • nanowatt operation
  • negative-AND (NAND) logic gates
  • silicon nanowires

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering
  • General Materials Science


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