Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications

Choong Rae Cho; Sung Hyuk Park; Byung Moo Moon; Jonas Sundqvist; Anders Hårsta; Alex Grishin

doi:10.1080/713718350

Na_0.5K_0.5NbO₃ thin films for MFIS_FET type non-volatile memory applications

Choong Rae Cho, Sung Hyuk Park, Byung Moo Moon, Jonas Sundqvist, Anders Hårsta, Alex Grishin

GREEN SCHOOL (Graduate School of Energy and Environment)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Na_0.5K_0.5NbO₃(NKN) thin films have been prepared on Pt₈₀Ir₂₀, SiO₂/Si, and Ta ₂O₅/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt₈₀Ir ₂₀ vertical capacitor yielded remnant polarization of 12 μC/cm² and coercive field ∼20 kV/cm. Significant flat-band voltage V_FB shifts with buffer layer thickness in Au/NKN/SiO ₂/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO₂ layer. On the other hand, Au/NKN/Ta ₂O₅/Si structure exhibited wide memory window without significant V_FB deviations, low leakage currents, and rather long retention time at zero bias.

Original language	English
Pages (from-to)	21-30
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	49
DOIs	https://doi.org/10.1080/713718350
Publication status	Published - 2002

Keywords

Au/NKN/TaO/Si MFIS_diode
Ferroelectric non-volatile memory
NaKNbO(NKN) thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/713718350

Cite this

@article{fb03aee4f14241dd8fb5297a12bd03f3,

title = "Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications",

abstract = "Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta 2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm2 and coercive field ∼20 kV/cm. Significant flat-band voltage VFB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta 2O5/Si structure exhibited wide memory window without significant VFB deviations, low leakage currents, and rather long retention time at zero bias.",

keywords = "Au/NKN/TaO/Si MFIS_diode, Ferroelectric non-volatile memory, NaKNbO(NKN) thin film",

author = "Cho, {Choong Rae} and Park, {Sung Hyuk} and Moon, {Byung Moo} and Jonas Sundqvist and Anders H{\aa}rsta and Alex Grishin",

year = "2002",

doi = "10.1080/713718350",

language = "English",

volume = "49",

pages = "21--30",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications

AU - Cho, Choong Rae

AU - Park, Sung Hyuk

AU - Moon, Byung Moo

AU - Sundqvist, Jonas

AU - Hårsta, Anders

AU - Grishin, Alex

PY - 2002

Y1 - 2002

N2 - Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta 2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm2 and coercive field ∼20 kV/cm. Significant flat-band voltage VFB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta 2O5/Si structure exhibited wide memory window without significant VFB deviations, low leakage currents, and rather long retention time at zero bias.

AB - Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta 2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir 20 vertical capacitor yielded remnant polarization of 12 μC/cm2 and coercive field ∼20 kV/cm. Significant flat-band voltage VFB shifts with buffer layer thickness in Au/NKN/SiO 2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta 2O5/Si structure exhibited wide memory window without significant VFB deviations, low leakage currents, and rather long retention time at zero bias.

KW - Au/NKN/TaO/Si MFIS_diode

KW - Ferroelectric non-volatile memory

KW - NaKNbO(NKN) thin film

UR - http://www.scopus.com/inward/record.url?scp=33751177802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751177802&partnerID=8YFLogxK

U2 - 10.1080/713718350

DO - 10.1080/713718350

M3 - Article

AN - SCOPUS:33751177802

SN - 1058-4587

VL - 49

SP - 21

EP - 30

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -