Keyphrases
(K,Na)NbO3
100%
Alkali Ions
20%
Buffer Layer Thickness
20%
Capacitors
20%
Coercive Field
20%
Ferroelectric Hysteresis Loop
20%
Ferroelectric Nonvolatile Memory
20%
FET-type
100%
Flat-band Voltage
20%
Long Retention Time
20%
Low Leakage Current
20%
Memory Application
100%
Memory Window
20%
MFIS-FET
100%
Non-volatile Memory
100%
Remnant Polarization
20%
Si Structures
40%
Si Substrate
20%
Silica
40%
SiO2 Layer
20%
Ta2O5
40%
Zero Bias
20%
Engineering
Buffer Layer
50%
Coercive Field
50%
Field Effect Transistor
100%
Hysteresis Loop
50%
Layer Thickness
50%
Nonvolatile Memory
100%
Retention Time
50%
Si Substrate
50%
Silicon Dioxide
50%
Sio2 Layer
50%
Thin Films
100%
Material Science
Buffer Layer
50%
Capacitor
50%
Ferroelectric Material
100%
Field Effect Transistor
100%
Thin Films
100%
Medicine and Dentistry
Buffer
50%
Silicon Dioxide
100%