Native and radiation induced defects in lattice mismatched InGaAs and InGaP

N. J. Ekins-Daukes; K. Arafune; H. S. Lee; T. Sasaki; M. Yamaguchi; A. Khan; T. Takamoto; T. Agui; K. Kamimura; M. Kaneiwa; M. Imaizumi; T. Ohshima; H. Itoh

Native and radiation induced defects in lattice mismatched InGaAs and InGaP

N. J. Ekins-Daukes, K. Arafune, H. S. Lee, T. Sasaki, M. Yamaguchi, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, H. Itoh

Research output: Contribution to journal › Conference article › peer-review

Abstract

The native and radiation induced defects in lattice mismatched In _0.16GaAs and In_0.58Ga_0.44P are investigated. Subjecting lattice mismatched In_0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from Deep Level Transient Spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1MeV electron irradiation is presented and compared to data from lattice mismatched In _0.56Ga_0.44 devices.

Original language	English
Pages (from-to)	683-686
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Publication status	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: 2005 Jan 3 → 2005 Jan 7

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{dcc9435519734174812cfc89777bd369,

title = "Native and radiation induced defects in lattice mismatched InGaAs and InGaP",

abstract = "The native and radiation induced defects in lattice mismatched In 0.16GaAs and In0.58Ga0.44P are investigated. Subjecting lattice mismatched In0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from Deep Level Transient Spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1MeV electron irradiation is presented and compared to data from lattice mismatched In 0.56Ga0.44 devices.",

author = "Ekins-Daukes, {N. J.} and K. Arafune and Lee, {H. S.} and T. Sasaki and M. Yamaguchi and A. Khan and T. Takamoto and T. Agui and K. Kamimura and M. Kaneiwa and M. Imaizumi and T. Ohshima and H. Itoh",

year = "2005",

language = "English",

pages = "683--686",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - JOUR

T1 - Native and radiation induced defects in lattice mismatched InGaAs and InGaP

AU - Ekins-Daukes, N. J.

AU - Arafune, K.

AU - Lee, H. S.

AU - Sasaki, T.

AU - Yamaguchi, M.

AU - Khan, A.

AU - Takamoto, T.

AU - Agui, T.

AU - Kamimura, K.

AU - Kaneiwa, M.

AU - Imaizumi, M.

AU - Ohshima, T.

AU - Itoh, H.

PY - 2005

Y1 - 2005

N2 - The native and radiation induced defects in lattice mismatched In 0.16GaAs and In0.58Ga0.44P are investigated. Subjecting lattice mismatched In0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from Deep Level Transient Spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1MeV electron irradiation is presented and compared to data from lattice mismatched In 0.56Ga0.44 devices.

AB - The native and radiation induced defects in lattice mismatched In 0.16GaAs and In0.58Ga0.44P are investigated. Subjecting lattice mismatched In0.16GaAs devices to thermal cycle annealing after growth shows a marked improvement in the open circuit voltage and a related trend is observed from Deep Level Transient Spectroscopy (DLTS) measurements as a reduction in the electronic defect density. The role of these native defects in the evolution of the defect levels under 1MeV electron irradiation is presented and compared to data from lattice mismatched In 0.56Ga0.44 devices.

UR - http://www.scopus.com/inward/record.url?scp=27944506511&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27944506511&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:27944506511

SN - 0160-8371

SP - 683

EP - 686

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Native and radiation induced defects in lattice mismatched InGaAs and InGaP

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this