Abstract
InxAl1-xAs/InyAl1-yAs vertical superlattices (VS) were naturally formed by phase separation during the growth of InAlAs/InP layers at temperatures in the range 565-615°C by metalorganic chemical vapor deposition. The VS lies perpendicular to the (001) growth plane. As the growth temperature increased from 565 to 615°C, the VS decreased in thickness from ∼15 to ∼6 nm, and became less planar and uniform. Transmission electron diffraction results showed the occurrence of CuPt-type ordering in some of the layers. Band-gap reduction of ∼300 meV was observed in the InAlAs layers grown at temperatures ranging from 565 to 615°C. Such a large reduction in band-gap energy was attributed to combined effects of the VS and CuPt-type ordering.
Original language | English |
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Pages (from-to) | 3443-3445 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 24 |
DOIs | |
Publication status | Published - 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)