Nature of luminescence and strain in gallium nitride nanowires

M. A. Mastro; S. Maximenko; M. Gowda; B. S. Simpkins; P. E. Pehrsson; J. P. Long; A. J. Makinen; J. A. Freitas; J. K. Hite; C. R. Eddy; J. Kim

doi:10.1016/j.jcrysgro.2009.01.053

Nature of luminescence and strain in gallium nitride nanowires

M. A. Mastro, S. Maximenko, M. Gowda, B. S. Simpkins, P. E. Pehrsson, J. P. Long, A. J. Makinen, J. A. Freitas, J. K. Hite, C. R. Eddy, J. Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

Original language	English
Pages (from-to)	2982-2986
Number of pages	5
Journal	Journal of Crystal Growth
Volume	311
Issue number	10
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.01.053
Publication status	Published - 2009 May 1

Keywords

A1. Stresses
B1. Gallium compounds
B1. Nanomaterials
B2. Semiconducting gallium compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2009.01.053

Cite this

@article{76f936c40ded4b42bbb2f7eb365ad843,

title = "Nature of luminescence and strain in gallium nitride nanowires",

abstract = "Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.",

keywords = "A1. Stresses, B1. Gallium compounds, B1. Nanomaterials, B2. Semiconducting gallium compounds",

author = "Mastro, {M. A.} and S. Maximenko and M. Gowda and Simpkins, {B. S.} and Pehrsson, {P. E.} and Long, {J. P.} and Makinen, {A. J.} and Freitas, {J. A.} and Hite, {J. K.} and Eddy, {C. R.} and J. Kim",

note = "Funding Information: Research at the US Naval Research Lab is partially supported by the Office of Naval Research and the Office of Naval Research—Global (Grant number N00014-07-1-4035). J.K.H. acknowledges the partial support of ASEE. M.G. is supported by NSF Award #ECS-0330226. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2009.01.053",

language = "English",

volume = "311",

pages = "2982--2986",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "10",

}

TY - JOUR

T1 - Nature of luminescence and strain in gallium nitride nanowires

AU - Mastro, M. A.

AU - Maximenko, S.

AU - Gowda, M.

AU - Simpkins, B. S.

AU - Pehrsson, P. E.

AU - Long, J. P.

AU - Makinen, A. J.

AU - Freitas, J. A.

AU - Hite, J. K.

AU - Eddy, C. R.

AU - Kim, J.

N1 - Funding Information: Research at the US Naval Research Lab is partially supported by the Office of Naval Research and the Office of Naval Research—Global (Grant number N00014-07-1-4035). J.K.H. acknowledges the partial support of ASEE. M.G. is supported by NSF Award #ECS-0330226. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

AB - Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

KW - A1. Stresses

KW - B1. Gallium compounds

KW - B1. Nanomaterials

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=65749097862&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65749097862&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.01.053

DO - 10.1016/j.jcrysgro.2009.01.053

M3 - Article

AN - SCOPUS:65749097862

SN - 0022-0248

VL - 311

SP - 2982

EP - 2986

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 10

ER -

Nature of luminescence and strain in gallium nitride nanowires

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this