Nature of luminescence and strain in gallium nitride nanowires

M. A. Mastro, S. Maximenko, M. Gowda, B. S. Simpkins, P. E. Pehrsson, J. P. Long, A. J. Makinen, J. A. Freitas, J. K. Hite, C. R. Eddy, J. Kim

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    Photo- and cathodo-luminescence measurements of a variable-diameter ensemble of GaN nanowires revealed a diameter-dependent, spectral emission distribution between 350 nm and 850 nm. Spectral analysis indicated that wires with a diameter less than 400 nm were dominated by a yellow luminescence with a weaker near UV/violet emission also present. Examination of this ensemble showed that there was a general trend in the ratio of near-UV-to-yellow emission intensities with increasing nanowire diameter. Additionally, a broad green emission appears in the nanowires with a diameter above approximately 200 nm. A calculation based on the nanoheteroepitaxy model indicates that this diameter represents a transitional thickness where strain is relieved by defect formation mechanisms with a characteristic green emission.

    Original languageEnglish
    Pages (from-to)2982-2986
    Number of pages5
    JournalJournal of Crystal Growth
    Volume311
    Issue number10
    DOIs
    Publication statusPublished - 2009 May 1

    Bibliographical note

    Funding Information:
    Research at the US Naval Research Lab is partially supported by the Office of Naval Research and the Office of Naval Research—Global (Grant number N00014-07-1-4035). J.K.H. acknowledges the partial support of ASEE. M.G. is supported by NSF Award #ECS-0330226.

    Copyright:
    Copyright 2009 Elsevier B.V., All rights reserved.

    Keywords

    • A1. Stresses
    • B1. Gallium compounds
    • B1. Nanomaterials
    • B2. Semiconducting gallium compounds

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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