Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

Sang Hyuk Im; Hi Jung Kim; Sang Il Seok

doi:10.1088/0957-4484/22/39/395502

Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

Sang Hyuk Im^*
, Hi Jung Kim
, Sang Il Seok

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO₂ (mp-TiO₂) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140nm wavelength and could process signals up to 1kHz.

Original language	English
Article number	395502
Journal	Nanotechnology
Volume	22
Issue number	39
DOIs	https://doi.org/10.1088/0957-4484/22/39/395502
Publication status	Published - 2011 Sept 30
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/22/39/395502

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title = "Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method",

abstract = "A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO2 (mp-TiO2) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3\% at 1140nm wavelength and could process signals up to 1kHz.",

author = "Im, \{Sang Hyuk\} and Kim, \{Hi Jung\} and Seok, \{Sang Il\}",

year = "2011",

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doi = "10.1088/0957-4484/22/39/395502",

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AU - Im, Sang Hyuk

AU - Kim, Hi Jung

AU - Seok, Sang Il

PY - 2011/9/30

Y1 - 2011/9/30

N2 - A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO2 (mp-TiO2) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140nm wavelength and could process signals up to 1kHz.

AB - A PbS-sensitized photovoltaic photodetector responsive to near-infrared (NIR) light was fabricated by depositing monolayered PbS nanoparticles on a mesoporous TiO2 (mp-TiO2) film via the spin-assisted successive ionic layer adsorption and reaction (SILAR) method. By adjusting the size and morphology of the PbS nanoparticles through repeated spin-assisted SILAR cycles, the PbS-sensitized photovoltaic photodetector achieved an external quantum efficiency of 9.3% at 1140nm wavelength and could process signals up to 1kHz.

UR - https://www.scopus.com/pages/publications/80052544545

U2 - 10.1088/0957-4484/22/39/395502

DO - 10.1088/0957-4484/22/39/395502

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SN - 0957-4484

VL - 22

JO - Nanotechnology

JF - Nanotechnology

IS - 39

M1 - 395502

ER -

Near-infrared responsive PbS-sensitized photovoltaic photodetectors fabricated by the spin-assisted successive ionic layer adsorption and reaction method

Abstract

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ASJC Scopus subject areas

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