In order to fabricate low cost and printable CuInxGa 1-xSeyS2-y (CIGS) thin film solar cells, a precursor solution based method was developed. Particularly, in this method, nearly carbon-free CIGS film was obtained by applying a three-step heat treatment process: the first for the elimination of carbon residue by air annealing, the second for the formation of CIGS alloy by sulfurization, and the third for grain growth and densification in the CIGS film by selenization. The film also revealed very large grains with a low degree of porosity, similar to those produced by the vacuum based method. A solar cell device with this film showed currentvoltage characteristics of Jsc=21.02 mA/cm2, Voc=451 mV, FF=47.3%, and η=4.48% at standard conditions.
Bibliographical noteFunding Information:
This work was supported by the Converging Research Center Program through the National Research Foundation of Korea ( NRF-2009-0081910 ) and the National Research Foundation of Korea Grant ( NRF-2009-C1AAA001-0092935 ) funded by the Ministry of Education, Science, and Technology . Also, the authors thank the program of Korea Institute of Science and Technology (KIST).
- Solar cells
- Solution process
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films