Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Jaesung Jo, Woo Young Choi, Jung Dong Park, Jae Won Shim, Hyun Yong Yu, Changhwan Shin

    Research output: Contribution to journalArticlepeer-review

    174 Citations (Scopus)

    Abstract

    Because of the "Boltzmann tyranny" (i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal-oxide-semiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device-that is, SS ∼18 mV/decade (much less than 60 mV/decade) at 300 K-by taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.

    Original languageEnglish
    Pages (from-to)4553-4556
    Number of pages4
    JournalNano Letters
    Volume15
    Issue number7
    DOIs
    Publication statusPublished - 2015 Jul 8

    Bibliographical note

    Publisher Copyright:
    © 2015 American Chemical Society.

    Keywords

    • ferroelectrics
    • metal-oxide-semiconductor field-effect transistor (MOSFET)
    • negative capacitance
    • steep switching

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • General Materials Science
    • Condensed Matter Physics
    • Mechanical Engineering

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