Abstract
The current-voltage (I-V) characteristic of single-wall carbon nanotubes (SWNT) network was investigated at low temperatures. At T∼1.6K, S-shaped negative differential resistance (NDR) was observed, which was systematically examined under the variation of temperature, magnetic field in transverse direction and distances between probes. S-shaped NDR was explained by the nondestructive impact ionization of carriers and the resulting formation of inhomogeneous spatial structures such as high-current filaments. Critical electric fied for impact ionization was estimated to be about 1V/cm.
Original language | English |
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Pages (from-to) | 1243-1244 |
Number of pages | 2 |
Journal | Synthetic Metals |
Volume | 121 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - 2001 Mar 15 |
Externally published | Yes |
Keywords
- Conductivity
- Fullerenes and derivatives
- Transport measurements
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry