Neural oscillation of single silicon nanowire neuron device with no external bias voltage

Sola Woo, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

In this study, we perform simulations to demonstrate neural oscillations in a single silicon nanowire neuron device comprising a gated p–n–p–n diode structure with no external bias lines. The neuron device emulates a biological neuron using interlinked positive and negative feedback loops, enabling neural oscillations with a high firing frequency of ~ 8 MHz and a low energy consumption of ~ 4.5 × 10−15 J. The neuron device provides a high integration density and low energy consumption for neuromorphic hardware. The periodic and aperiodic patterns of the neural oscillations depend on the amplitudes of the analog and digital input signals. Furthermore, the device characteristics, energy band diagram, and leaky integrate-and-fire operation of the neuron device are discussed.

Original languageEnglish
Article number3516
JournalScientific reports
Volume12
Issue number1
DOIs
Publication statusPublished - 2022 Dec

Bibliographical note

Funding Information:
This research was supported in part by the Ministry of Trade, Industry & Energy (MOTIE; 10067791) and the Korea Semiconductor Research Consortium (KSRC) support program for the development of future semiconductor devices. It was also supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT; 2020R1A2C3004538), the Brain Korea 21 Plus Project of 2021 through the NRF funded by the Ministry of Science, ICT & Future Planning.

Publisher Copyright:
© 2022, The Author(s).

ASJC Scopus subject areas

  • General

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