Neutron doping effects in epitaxially laterally overgrown n-GaN

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; E. A. Kozhukhova; E. B. Yakimov; N. G. Kolin; V. M. Boiko; A. V. Korulin; S. J. Pearton

doi:10.1063/1.3593957

Neutron doping effects in epitaxially laterally overgrown n-GaN

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, E. B. Yakimov, N. G. Kolin, V. M. Boiko, A. V. Korulin, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.

Original language	English
Article number	212107
Journal	Applied Physics Letters
Volume	98
Issue number	21
DOIs	https://doi.org/10.1063/1.3593957
Publication status	Published - 2011 May 23
Externally published	Yes

Bibliographical note

Funding Information:
The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. gratefully acknowledges support from the Brainpull Program of Korean Government during his stay at Chonbuk National University.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Neutron doping effects in epitaxially laterally overgrown n-GaN",

abstract = "Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Kozhukhova, {E. A.} and Yakimov, {E. B.} and Kolin, {N. G.} and Boiko, {V. M.} and Korulin, {A. V.} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. gratefully acknowledges support from the Brainpull Program of Korean Government during his stay at Chonbuk National University.",

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doi = "10.1063/1.3593957",

language = "English",

volume = "98",

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T1 - Neutron doping effects in epitaxially laterally overgrown n-GaN

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Kozhukhova, E. A.

AU - Yakimov, E. B.

AU - Kolin, N. G.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by the International Science and Technology Center ICTS Grant No. 3870. A.Y.P. gratefully acknowledges support from the Brainpull Program of Korean Government during his stay at Chonbuk National University.

PY - 2011/5/23

Y1 - 2011/5/23

N2 - Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.

AB - Thermal neutron irradiation and annealing effects were studied for undoped n-GaN prepared by epitaxial lateral overgrowth (ELOG). Electron beam induced current (EBIC) imaging and profiling prior to irradiation showed that the residual donor doping in our ELOG samples was about three times higher in the high-dislocation-density ELOG wing than in the low-dislocation-density ELOG window regions. Irradiation with thermal neutrons and subsequent annealing led to greatly improved doping uniformity, as evidenced by EBIC imaging. The neutron transmutation doping avoids the anisotropy of donor incorporation efficiency for different planes during ELOG and provides a uniform doping environment. Capacitance-voltage profiling on such samples showed the presence of electrically active centers with concentration close to the concentration of Ge donors produced by Ga interaction with thermal neutrons.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 212107

ER -

Neutron doping effects in epitaxially laterally overgrown n-GaN

Abstract

Bibliographical note

ASJC Scopus subject areas

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