Neutron irradiation effects in AlGaN/GaN heterojunctions

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; S. J. Pearton; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; M. Skowronski; I. H. Lee

doi:10.1016/j.physb.2005.12.133

Neutron irradiation effects in AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, M. Skowronski, I. H. Lee

Research output: Contribution to journal › Conference article › peer-review

20 Citations (Scopus)

Abstract

It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 10¹⁵ cm^-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

Original language	English
Pages (from-to)	523-526
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.133
Publication status	Published - 2006 Apr 1
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant no. 04-02-16510).

Keywords

AlGaN/GaN heterojunctions
Deep traps
Irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2005.12.133

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title = "Neutron irradiation effects in AlGaN/GaN heterojunctions",

abstract = "It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.",

keywords = "AlGaN/GaN heterojunctions, Deep traps, Irradiation",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Pearton, {S. J.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and M. Skowronski and Lee, {I. H.}",

note = "Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant no. 04-02-16510).; Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.133",

language = "English",

volume = "376-377",

pages = "523--526",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Neutron irradiation effects in AlGaN/GaN heterojunctions

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Pearton, S. J.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Skowronski, M.

AU - Lee, I. H.

N1 - Funding Information: The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant no. 04-02-16510).

PY - 2006/4/1

Y1 - 2006/4/1

N2 - It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

AB - It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

KW - AlGaN/GaN heterojunctions

KW - Deep traps

KW - Irradiation

UR - http://www.scopus.com/inward/record.url?scp=33645220399&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.133

DO - 10.1016/j.physb.2005.12.133

M3 - Conference article

AN - SCOPUS:33645220399

SN - 0921-4526

VL - 376-377

SP - 523

EP - 526

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Neutron irradiation effects in AlGaN/GaN heterojunctions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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