Neutron irradiation effects in AlGaN/GaN heterojunctions

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, S. J. Pearton, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, M. Skowronski, I. H. Lee

Research output: Contribution to journalConference articlepeer-review

19 Citations (Scopus)


It is shown that in neutron-irradiated undoped n-AlGaN/GaN heterojunctions, the mobility and sheet conductivity start to decrease only after exposure to doses higher than 1015 cm-2. The effects on mobility are mostly due to the introduction of additional scattering centers in the GaN buffer layer of the structures while there are only slight changes in the two-dimensional electron concentration. Electron traps with activation energy of 0.21, 0.35 and 0.45 eV were observed in the AlGaN barrier, hole traps with energies of 0.18, 0.2, 0.26, 0.7 and 1 eV were detected and could be located either in the AlGaN barrier or in the GaN buffer.

Original languageEnglish
Pages (from-to)523-526
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1
Publication statusPublished - 2006 Apr 1
Externally publishedYes
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Bibliographical note

Funding Information:
The work at IRM was supported in part by a grant from the Russian Foundation for Basic Research (Grant no. 04-02-16510).


  • AlGaN/GaN heterojunctions
  • Deep traps
  • Irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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