Abstract
Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm2 gate were irradiated with a dose of 2.8×1011 cm-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.
Original language | English |
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Pages (from-to) | 205-207 |
Number of pages | 3 |
Journal | Journal of Crystal Growth |
Volume | 326 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 Jul 1 |
Keywords
- A1. Neutron irradiation
- B1. GaN
- B1. SiC
- B3. High electron mobility transistor
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry