Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

Byung Jae Kim; Hong Yeol Kim; Jihyun Kim; Soohwan Jang

doi:10.1016/j.jcrysgro.2011.01.098

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

Byung Jae Kim, Hong Yeol Kim, Jihyun Kim, Soohwan Jang

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm² gate were irradiated with a dose of 2.8×10¹¹ cm^-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.

Original language	English
Pages (from-to)	205-207
Number of pages	3
Journal	Journal of Crystal Growth
Volume	326
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.01.098
Publication status	Published - 2011 Jul 1

Keywords

A1. Neutron irradiation
B1. GaN
B1. SiC
B3. High electron mobility transistor

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.01.098

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title = "Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates",

abstract = "Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm2 gate were irradiated with a dose of 2.8×1011 cm-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.",

keywords = "A1. Neutron irradiation, B1. GaN, B1. SiC, B3. High electron mobility transistor",

author = "Kim, {Byung Jae} and Kim, {Hong Yeol} and Jihyun Kim and Soohwan Jang",

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doi = "10.1016/j.jcrysgro.2011.01.098",

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journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

AU - Kim, Byung Jae

AU - Kim, Hong Yeol

AU - Kim, Jihyun

AU - Jang, Soohwan

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm2 gate were irradiated with a dose of 2.8×1011 cm-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.

AB - Electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) on SiC substrates irradiated with low dose of neutron are reported. AlGaN/GaN HEMTs with 0.5×100 μm2 gate were irradiated with a dose of 2.8×1011 cm-2 neutrons and average energy of 9.8 MeV. 10% of drain-source current was reduced right after neutron exposure, but complete recovery of current was observed in 40 day storage at room temperature. This is attributed to self-annealing process which removes unstable mobile defect clusters created by neutron bombardment. Also, neutron damaged sample showed instant recovery under UV light exposure. Fully recovered device was irradiated again with same conditions of neutrons, and similar recovery behavior at room temperature was obtained.

KW - A1. Neutron irradiation

KW - B1. GaN

KW - B1. SiC

KW - B3. High electron mobility transistor

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DO - 10.1016/j.jcrysgro.2011.01.098

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SN - 0022-0248

VL - 326

SP - 205

EP - 207

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates

Abstract

Keywords

ASJC Scopus subject areas

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