Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.
Bibliographical noteFunding Information:
The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.
- Neutron irradiation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry