Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; E. B. Yakimov; P. S. Vergeles; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; In Hwan Lee; Cheul Ro Lee; S. J. Pearton

doi:10.1007/s11664-007-0203-8

Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, In Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 ¹⁷ cm ^-2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

Original language	English
Pages (from-to)	1320-1325
Number of pages	6
Journal	Journal of Electronic Materials
Volume	36
Issue number	10
DOIs	https://doi.org/10.1007/s11664-007-0203-8
Publication status	Published - 2007 Oct
Externally published	Yes

Bibliographical note

Funding Information:
The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.

Keywords

ELOG
GaN
Neutron irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-007-0203-8

Cite this

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title = "Neutron radiation effects in epitaxially laterally overgrown GaN films",

abstract = "Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.",

keywords = "ELOG, GaN, Neutron irradiation",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Yakimov, {E. B.} and Vergeles, {P. S.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and Lee, {In Hwan} and Lee, {Cheul Ro} and Pearton, {S. J.}",

note = "Funding Information: The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.",

year = "2007",

month = oct,

doi = "10.1007/s11664-007-0203-8",

language = "English",

volume = "36",

pages = "1320--1325",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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T1 - Neutron radiation effects in epitaxially laterally overgrown GaN films

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Lee, In Hwan

AU - Lee, Cheul Ro

AU - Pearton, S. J.

N1 - Funding Information: The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.

PY - 2007/10

Y1 - 2007/10

N2 - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

AB - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

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KW - GaN

KW - Neutron irradiation

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Neutron radiation effects in epitaxially laterally overgrown GaN films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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