Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. B. Yakimov, P. S. Vergeles, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, In Hwan Lee, Cheul Ro Lee, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

Original languageEnglish
Pages (from-to)1320-1325
Number of pages6
JournalJournal of Electronic Materials
Issue number10
Publication statusPublished - 2007 Oct
Externally publishedYes

Bibliographical note

Funding Information:
The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.


  • ELOG
  • GaN
  • Neutron irradiation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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