Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; E. B. Yakimov; P. S. Vergeles; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; In Hwan Lee; Cheul Ro Lee; S. J. Pearton

doi:10.1007/s11664-007-0203-8

Neutron radiation effects in epitaxially laterally overgrown GaN films

A. Y. Polyakov^*
, N. B. Smirnov
, A. V. Govorkov
, A. V. Markov
, E. B. Yakimov
, P. S. Vergeles
, N. G. Kolin
, D. I. Merkurisov
, V. M. Boiko
, In Hwan Lee
, Cheul Ro Lee
, S. J. Pearton

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 ¹⁷ cm ^-2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

Original language	English
Pages (from-to)	1320-1325
Number of pages	6
Journal	Journal of Electronic Materials
Volume	36
Issue number	10
DOIs	https://doi.org/10.1007/s11664-007-0203-8
Publication status	Published - 2007 Oct
Externally published	Yes

Bibliographical note

Funding Information:
The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.

Keywords

ELOG
GaN
Neutron irradiation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-007-0203-8

Cite this

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title = "Neutron radiation effects in epitaxially laterally overgrown GaN films",

abstract = "Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.",

keywords = "ELOG, GaN, Neutron irradiation",

author = "Polyakov, \{A. Y.\} and Smirnov, \{N. B.\} and Govorkov, \{A. V.\} and Markov, \{A. V.\} and Yakimov, \{E. B.\} and Vergeles, \{P. S.\} and Kolin, \{N. G.\} and Merkurisov, \{D. I.\} and Boiko, \{V. M.\} and Lee, \{In Hwan\} and Lee, \{Cheul Ro\} and Pearton, \{S. J.\}",

note = "Funding Information: The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant \# 05-02-08015) and ICTS (grant \# 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.",

year = "2007",

month = oct,

doi = "10.1007/s11664-007-0203-8",

language = "English",

volume = "36",

pages = "1320--1325",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

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TY - JOUR

T1 - Neutron radiation effects in epitaxially laterally overgrown GaN films

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Yakimov, E. B.

AU - Vergeles, P. S.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Lee, In Hwan

AU - Lee, Cheul Ro

AU - Pearton, S. J.

N1 - Funding Information: The work at the Institute of Rare Metals (IRM) was supported in part by a grant from the Russian Foundation for Basic Research (RFBR grant # 05-02-08015) and ICTS (grant # 3029). The work at the University of Florida (UF) was partially supported by NSF DMR-040010.

PY - 2007/10

Y1 - 2007/10

N2 - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

AB - Neutron radiation effects were studied in undoped n-GaN films grown by epitaxial lateral overgrowth (ELOG). The irradiation leads to carrier removal and introduces deep electron traps with activation energy 0.8 eV and 1 eV. After the application of doses exceeding 10 17 cm -2, the material becomes semi-insulating n-type, with the Fermi level pinned near the level of the deeper electron trap. These features are similar to those previously observed for neutron irradiated undoped n-GaN prepared by standard metal-organic chemical vapor deposition (MOCVD). However, the average carrier removal rate and the deep center introduction rate in ELOG samples is about five-times lower than in MOCVD samples. Studies of electron beam induced current (EBIC) show that the changes in the concentration of charged centers are a minimum in the low-dislocation-density laterally overgrown regions and radiation-induced damage propagates inside these laterally overgrown areas from their boundary with the high-dislocation-density GaN in the windows of the ELOG mask.

KW - ELOG

KW - GaN

KW - Neutron irradiation

UR - https://www.scopus.com/pages/publications/34848842468

U2 - 10.1007/s11664-007-0203-8

DO - 10.1007/s11664-007-0203-8

M3 - Article

AN - SCOPUS:34848842468

SN - 0361-5235

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EP - 1325

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Neutron radiation effects in epitaxially laterally overgrown GaN films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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