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Neutron radiation effects in epitaxially laterally overgrown GaN films
A. Y. Polyakov
*
, N. B. Smirnov
, A. V. Govorkov
, A. V. Markov
, E. B. Yakimov
, P. S. Vergeles
, N. G. Kolin
, D. I. Merkurisov
, V. M. Boiko
,
In Hwan Lee
, Cheul Ro Lee
, S. J. Pearton
*
Corresponding author for this work
Research output
:
Contribution to journal
›
Article
›
peer-review
33
Citations (Scopus)
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Keyphrases
GaN Films
100%
Epitaxial Lateral Overgrowth
100%
Neutron Radiation Effects
100%
Metal-organic Chemical Vapor Deposition (MOCVD)
66%
Undoped
66%
N-GaN
66%
Carrier Removal
66%
Deep Electron Traps
66%
Activation Energy
33%
Irradiation
33%
Radiation Damage
33%
Low Dislocation Density
33%
Fermi Level
33%
Semi-insulating
33%
High-density Dislocation
33%
Deep Centers
33%
Neutron-irradiated
33%
Electron Beam Induced Current
33%
Introduction Rate
33%
Engineering
Metal Organic Chemical Vapor Deposition
100%
Radiation Effect
100%
Electron Trap
100%
Activation Energy
50%
Dislocation Density
50%
Induced Damage
50%
Removal Rate
50%
High Dislocation Density
50%
Fermi Level
50%
Material Science
Film
100%
Metal-Organic Chemical Vapor Deposition
100%
Density
100%
Activation Energy
50%