New π-extended triphenylene-based organic semiconductors in field-effect transistors

Mai Ha Hoang; Duc Nghia Nguyen; Trinh Tung Ngo; Min Ju Cho; Suk Joong Lee; Dong Hoon Choi

doi:10.1016/j.synthmet.2015.08.022

New π-extended triphenylene-based organic semiconductors in field-effect transistors

Mai Ha Hoang, Duc Nghia Nguyen, Trinh Tung Ngo, Min Ju Cho, Suk Joong Lee, Dong Hoon Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We demonstrated the synthesis of two new solution-processed triphenylene-based semiconductors and characterized their physical, optical, and electrochemical properties. Both were intriguingly capable of producing smooth films and high-quality microcrystalline objects. The single-crystal-based field-effect transistors (FETs) using these semiconductors displayed a maximum carrier mobility of ∼0.03 cm² V^-1 s^-1 and a high on/off current ratio of ∼10³. Notably, the mobilities of the single-crystal-based FETs were measured to be two orders of magnitude greater than those of the thin-film transistors. To our knowledge, the carrier mobility obtained in this work is the highest ever reported for single-crystal FETs made of triphenylene analogues.

Original language	English
Article number	15069
Pages (from-to)	434-440
Number of pages	7
Journal	Synthetic Metals
Volume	209
DOIs	https://doi.org/10.1016/j.synthmet.2015.08.022
Publication status	Published - 2015 Nov 1

Bibliographical note

Funding Information:
This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number “ 104.02-2013.67 ”. This research was supported by National Research Foundation of Korea ( NRF2012R1A2A1A01008797 ) and by Key Research Institute Program ( NRF20100020209 ). We are grateful to Pohang Accelerator Laboratory (Pohang, Korea) for allowing us to conduct the grazing incidence X-ray diffraction (GI-XRD) measurements.

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Conjugated molecule
Field-effect transistor
Mobility
Organic semiconductor
Triphenylene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.synthmet.2015.08.022

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@article{1657645ca63a45149965c07982e920af,

title = "New π-extended triphenylene-based organic semiconductors in field-effect transistors",

abstract = "We demonstrated the synthesis of two new solution-processed triphenylene-based semiconductors and characterized their physical, optical, and electrochemical properties. Both were intriguingly capable of producing smooth films and high-quality microcrystalline objects. The single-crystal-based field-effect transistors (FETs) using these semiconductors displayed a maximum carrier mobility of ∼0.03 cm2 V-1 s-1 and a high on/off current ratio of ∼103. Notably, the mobilities of the single-crystal-based FETs were measured to be two orders of magnitude greater than those of the thin-film transistors. To our knowledge, the carrier mobility obtained in this work is the highest ever reported for single-crystal FETs made of triphenylene analogues.",

keywords = "Conjugated molecule, Field-effect transistor, Mobility, Organic semiconductor, Triphenylene",

author = "Hoang, {Mai Ha} and Nguyen, {Duc Nghia} and Ngo, {Trinh Tung} and Cho, {Min Ju} and Lee, {Suk Joong} and Choi, {Dong Hoon}",

note = "Funding Information: This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number “ 104.02-2013.67 ”. This research was supported by National Research Foundation of Korea ( NRF2012R1A2A1A01008797 ) and by Key Research Institute Program ( NRF20100020209 ). We are grateful to Pohang Accelerator Laboratory (Pohang, Korea) for allowing us to conduct the grazing incidence X-ray diffraction (GI-XRD) measurements. Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = nov,

day = "1",

doi = "10.1016/j.synthmet.2015.08.022",

language = "English",

volume = "209",

pages = "434--440",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - New π-extended triphenylene-based organic semiconductors in field-effect transistors

AU - Hoang, Mai Ha

AU - Nguyen, Duc Nghia

AU - Ngo, Trinh Tung

AU - Cho, Min Ju

AU - Lee, Suk Joong

AU - Choi, Dong Hoon

N1 - Funding Information: This research is funded by Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number “ 104.02-2013.67 ”. This research was supported by National Research Foundation of Korea ( NRF2012R1A2A1A01008797 ) and by Key Research Institute Program ( NRF20100020209 ). We are grateful to Pohang Accelerator Laboratory (Pohang, Korea) for allowing us to conduct the grazing incidence X-ray diffraction (GI-XRD) measurements. Publisher Copyright: © 2015 Elsevier B.V.

PY - 2015/11/1

Y1 - 2015/11/1

N2 - We demonstrated the synthesis of two new solution-processed triphenylene-based semiconductors and characterized their physical, optical, and electrochemical properties. Both were intriguingly capable of producing smooth films and high-quality microcrystalline objects. The single-crystal-based field-effect transistors (FETs) using these semiconductors displayed a maximum carrier mobility of ∼0.03 cm2 V-1 s-1 and a high on/off current ratio of ∼103. Notably, the mobilities of the single-crystal-based FETs were measured to be two orders of magnitude greater than those of the thin-film transistors. To our knowledge, the carrier mobility obtained in this work is the highest ever reported for single-crystal FETs made of triphenylene analogues.

AB - We demonstrated the synthesis of two new solution-processed triphenylene-based semiconductors and characterized their physical, optical, and electrochemical properties. Both were intriguingly capable of producing smooth films and high-quality microcrystalline objects. The single-crystal-based field-effect transistors (FETs) using these semiconductors displayed a maximum carrier mobility of ∼0.03 cm2 V-1 s-1 and a high on/off current ratio of ∼103. Notably, the mobilities of the single-crystal-based FETs were measured to be two orders of magnitude greater than those of the thin-film transistors. To our knowledge, the carrier mobility obtained in this work is the highest ever reported for single-crystal FETs made of triphenylene analogues.

KW - Conjugated molecule

KW - Field-effect transistor

KW - Mobility

KW - Organic semiconductor

KW - Triphenylene

UR - http://www.scopus.com/inward/record.url?scp=84940707674&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2015.08.022

DO - 10.1016/j.synthmet.2015.08.022

M3 - Article

AN - SCOPUS:84940707674

SN - 0379-6779

VL - 209

SP - 434

EP - 440

JO - Synthetic Metals

JF - Synthetic Metals

M1 - 15069

ER -

New π-extended triphenylene-based organic semiconductors in field-effect transistors

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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