New lateral insulated-gate bipolar transistor on silicon-on-insulator

Woo Beom Choi, Woong Je Sung, Chun Il Park, Sangsig Kim, Man Young Sung

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

    Original languageEnglish
    Pages (from-to)645-648
    Number of pages4
    JournalJournal of the Korean Physical Society
    Volume40
    Issue number4
    DOIs
    Publication statusPublished - 2002 Apr

    Keywords

    • Dual-collector structure
    • LIGBT
    • Latch-up
    • SOI

    ASJC Scopus subject areas

    • General Physics and Astronomy

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