Abstract
To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.
Original language | English |
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Pages (from-to) | 645-648 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 40 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2002 Apr |
Keywords
- Dual-collector structure
- LIGBT
- Latch-up
- SOI
ASJC Scopus subject areas
- Physics and Astronomy(all)