New lateral insulated-gate bipolar transistor on silicon-on-insulator

Woo Beom Choi, Woong Je Sung, Chun Il Park, Sangsig Kim, Man Young Sung

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

Original languageEnglish
Pages (from-to)645-648
Number of pages4
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2002 Apr


  • Dual-collector structure
  • Latch-up
  • SOI

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'New lateral insulated-gate bipolar transistor on silicon-on-insulator'. Together they form a unique fingerprint.

Cite this