New lateral insulated-gate bipolar transistor on silicon-on-insulator

Woo Beom Choi; Woong Je Sung; Chun Il Park; Sangsig Kim; Man Young Sung

doi:10.3938/jkps.40.645

New lateral insulated-gate bipolar transistor on silicon-on-insulator

Woo Beom Choi, Woong Je Sung, Chun Il Park, Sangsig Kim, Man Young Sung

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

Original language	English
Pages (from-to)	645-648
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	40
Issue number	4
DOIs	https://doi.org/10.3938/jkps.40.645
Publication status	Published - 2002 Apr

Keywords

Dual-collector structure
LIGBT
Latch-up
SOI

ASJC Scopus subject areas

General Physics and Astronomy

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10.3938/jkps.40.645

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abstract = "To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.",

keywords = "Dual-collector structure, LIGBT, Latch-up, SOI",

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AU - Choi, Woo Beom

AU - Sung, Woong Je

AU - Park, Chun Il

AU - Kim, Sangsig

AU - Sung, Man Young

PY - 2002/4

Y1 - 2002/4

N2 - To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

AB - To improve the latch-up and forward voltage drop properties of a silicon-on-insulator (SOI) lateral insulated-gate bipolar transistor (LIGBT), we proposed and fabricated a new SOI LIGBT structure. The new device employs a dual-collector structure in order to enable more electrons to flow into the n- drift layer and to improve the latch-up characteristic. The latch-up current density for the proposed SOI LIGBT exhibits a 4 times improvement over that of a conventional SOI LIGBT of similar structure.

KW - Dual-collector structure

KW - LIGBT

KW - Latch-up

KW - SOI

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

New lateral insulated-gate bipolar transistor on silicon-on-insulator

Abstract

Keywords

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