New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Dae Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu Tae Kim; Gérard Ghibaudo

doi:10.1016/j.sse.2013.08.003

New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Dae Young Jeon, So Jeong Park, Mireille Mouis, Sylvain Barraud, Gyu Tae Kim, Gérard Ghibaudo

Research output: Contribution to journal › Letter › peer-review

13 Citations (Scopus)

Abstract

A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (μ_bulk) and flat-band voltage (V_fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/gm2) vs gate voltage in the partially depleted operation regime (V_th < V_g < V_fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g_m of JLT devices.

Original language	English
Pages (from-to)	139-141
Number of pages	3
Journal	Solid-State Electronics
Volume	89
DOIs	https://doi.org/10.1016/j.sse.2013.08.003
Publication status	Published - 2013

Keywords

2D numerical simulation
Bulk channel mobility
Extraction method
Flat-band voltage
Junctionless transistors (JLTs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2013.08.003

Cite this

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title = "New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors",

abstract = "A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (μbulk) and flat-band voltage (Vfb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/gm2) vs gate voltage in the partially depleted operation regime (Vth < Vg < Vfb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for gm of JLT devices.",

keywords = "2D numerical simulation, Bulk channel mobility, Extraction method, Flat-band voltage, Junctionless transistors (JLTs)",

author = "Jeon, {Dae Young} and Park, {So Jeong} and Mireille Mouis and Sylvain Barraud and Kim, {Gyu Tae} and G{\'e}rard Ghibaudo",

note = "Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under Grant Agreement No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638).",

year = "2013",

doi = "10.1016/j.sse.2013.08.003",

language = "English",

volume = "89",

pages = "139--141",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

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TY - JOUR

T1 - New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

AU - Jeon, Dae Young

AU - Park, So Jeong

AU - Mouis, Mireille

AU - Barraud, Sylvain

AU - Kim, Gyu Tae

AU - Ghibaudo, Gérard

N1 - Funding Information: This work was supported by European Union 7th Framework Program project SQWIRE under Grant Agreement No. 257111 and by the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Converging Research Center Program, 2012K001313 and Global Frontier Research Program, No. 2011-0031638).

PY - 2013

Y1 - 2013

N2 - A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (μbulk) and flat-band voltage (Vfb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/gm2) vs gate voltage in the partially depleted operation regime (Vth < Vg < Vfb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for gm of JLT devices.

AB - A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (μbulk) and flat-band voltage (Vfb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/gm2) vs gate voltage in the partially depleted operation regime (Vth < Vg < Vfb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for gm of JLT devices.

KW - 2D numerical simulation

KW - Bulk channel mobility

KW - Extraction method

KW - Flat-band voltage

KW - Junctionless transistors (JLTs)

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U2 - 10.1016/j.sse.2013.08.003

DO - 10.1016/j.sse.2013.08.003

M3 - Letter

AN - SCOPUS:84883501852

SN - 0038-1101

VL - 89

SP - 139

EP - 141

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

Abstract

Keywords

ASJC Scopus subject areas

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