Abstract
We report on the effect of Ni implantation on the crystallisation process of amorphous Si formed by ion implantation during excimer laser annealing. Scanning transmission electron microscopy and X-ray photoemission spectroscopy results show that NiSi2 precipitates are formed in the Si-Ni-implanted samples. It is shown that the Ni implantation results in the enhanced crystallisation of amorphous Si during laser annealing. The Si-Ni-implanted samples become epitaxial to the Si substrate at 600 mJ/cm2, while the Si-implanted samples produce epitaxial relationship at 800 mJ/cm2. Possible mechanisms by which implanted Ni atoms play a role are given to describe the enhanced crystallisation process of amorphous Si.
Original language | English |
---|---|
Pages (from-to) | 979-985 |
Number of pages | 7 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 17 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2006 Dec |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering