The effect of hydrogen implantation on a nickel silicide process has been investigated. X-ray photoemission spectroscopy results show that the hydrogen implantation is effective in suppressing the oxidation of NiSi. It is further shown that the junction leakage current of the implanted samples is about one order of magnitude lower than that of the unimplanted ones.
|Number of pages||3|
|Publication status||Published - 2004 Mar 18|
ASJC Scopus subject areas
- Electrical and Electronic Engineering