Abstract
A new processes for fabricating NiO exchange bias layers has been developed. The process involves the direct ion beam sputtering (IBS) of a NiO target. The process is simpler than other deposition techniques for producing NiO buffer layers, and facilitates the deposition of an entire spin-valve layered structure using IBS without breaking vacuum. The layer thickness and temperature dependence of the exchange field for NiO/NiFe films produced using IBS are presented and are similar to those reported for similar films deposited using reactive magnetron sputtering. The magnetic properties of highly textured exchange couples deposited on single crystal substrates are compared to those of simultaneously deposited polycrystalline films, and both show comparable exchange fields. These results are compared to current theories describing the exchange coupling at the NiO/NiFe interface.
| Original language | English |
|---|---|
| Pages (from-to) | 4651-4653 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 32 |
| Issue number | 5 PART 2 |
| DOIs | |
| Publication status | Published - 1996 |
| Externally published | Yes |
Bibliographical note
Funding Information:Part of this work was performed under the auspices of the U. S. Department of Energy (DOE) by LLNL under contract No. W-7405-ENG-48, and part was supported by DOES Tailored Microstructures in Hard Magnets Initiative. LEJ supported by DOE'S Science and Engineering Research Semester, and Partners in Industry and Education programs.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering