Nitrogen incorporation in GaAsN grown by chemical beam epitaxy

Y. Ohshita; K. Nishimura; H. S. Lee; N. Kojima; I. Gono; H. Suzuki; M. Yamaguchi

Nitrogen incorporation in GaAsN grown by chemical beam epitaxy

Y. Ohshita, K. Nishimura, H. S. Lee, N. Kojima, I. Gono, H. Suzuki, M. Yamaguchi

Research output: Contribution to conference › Paper › peer-review

Abstract

Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.

Original language	English
Pages	272-277
Number of pages	6
Publication status	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: 2005 May 16 → 2005 May 20

Conference

Conference	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	05/5/16 → 05/5/20

ASJC Scopus subject areas

General Engineering

Cite this

@conference{17e84818b4fe43d1a0819e19a4804335,

title = "Nitrogen incorporation in GaAsN grown by chemical beam epitaxy",

abstract = "Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.",

author = "Y. Ohshita and K. Nishimura and Lee, {H. S.} and N. Kojima and I. Gono and H. Suzuki and M. Yamaguchi",

year = "2005",

language = "English",

pages = "272--277",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

}

TY - CONF

T1 - Nitrogen incorporation in GaAsN grown by chemical beam epitaxy

AU - Ohshita, Y.

AU - Nishimura, K.

AU - Lee, H. S.

AU - Kojima, N.

AU - Gono, I.

AU - Suzuki, H.

AU - Yamaguchi, M.

PY - 2005

Y1 - 2005

N2 - Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.

AB - Chemical beam epitaxial growth system has been developed for achieving good quality InGaAsN thin film, which will be adopted as a third material of four-junction tandem solar cell. Methylhydrazine, which was used as a N source, was decomposed on the growing surface. Between 400-420°C, N concentration had slight temperature dependence. The adsorbed N-related molecules hindered the decomposition of Ga precursor TEG on the surface, resulting in the decrease of the growth. Above 440°C, the number of N incorporated in the grown film swiftly decreased. The growth rate had slight temperature dependence and the quality of grown film became deteriorated although the amount of residual N decreased.

UR - http://www.scopus.com/inward/record.url?scp=31844439086&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844439086

SP - 272

EP - 277

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Nitrogen incorporation in GaAsN grown by chemical beam epitaxy

Abstract

Conference

ASJC Scopus subject areas

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