Nitrogen-plasma treatment of parallel-aligned SnO2-nanowire field-effect transistors

Yong Hee Choi, Junhong Na, Jae Sung Kim, Min Kyu Joo, Gyu Tae Kim, Pil Soo Kang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Nitrogen (N2)-plasma treatment and polymethylmethacrylate (PMMA) passivation were carried out to stabilize the electrical properties of parallel-aligned tin-dioxide (SnO2)-nanowire field-effect transistors. Treatment led to a positive shift in the threshold voltage, Vth, with a reduction in the hysteresis in the transfer curves of more than 30% compared to the case without treatment. Passivation was carried using a PMMA coating to prevent changes in the electrical properties over time. X-ray photoelectron spectroscopy and Auger electron spectroscopy were employed to determine the chemical mechanisms that resulted in the changes in the electrical properties over time, those changes being attributed to the recombination of oxygen vacancies and carbon contaminants on the surface of the SnO2 nanowires with oxygen in the ambient air.

Original languageEnglish
Pages (from-to)502-508
Number of pages7
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2014 Sept 1

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Science, ICT and Future Planning, Korea (2013K000175).

Publisher Copyright:
© 2014, The Korean Physical Society.


  • Nanowire
  • Nitrogen-plasma
  • Tin-dioxide

ASJC Scopus subject areas

  • General Physics and Astronomy


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