Noise figure formulas of RF MOSFETs in the presence of digital substrate noise

Chan Hyeong Park; Yongho Oh; Jae Sung Rieh

doi:10.1109/LMWC.2010.2068041

Noise figure formulas of RF MOSFETs in the presence of digital substrate noise

Chan Hyeong Park, Yongho Oh, Jae Sung Rieh

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise.

Original language	English
Article number	5582111
Pages (from-to)	622-624
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	20
Issue number	11
DOIs	https://doi.org/10.1109/LMWC.2010.2068041
Publication status	Published - 2010 Nov

Bibliographical note

Funding Information:
Manuscript received June 24, 2010; accepted August 04, 2010. Date of publication September 23, 2010; date of current version November 05, 2010. This work was supported by a research grant of Kwangwoon University in 2009 and by the NRF Grant funded by the Korea government (MEST) (2009-0086266). C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea (e-mail: [email protected]). Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2010.2068041 Fig. 1. Small-signal equivalent circuit of an RF MOSFET under digital substrate noise [6].

Keywords

Digital substrate noise
RF MOSFET
noise figure (NF)
substrate noise
thermal noise

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2010.2068041

Cite this

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title = "Noise figure formulas of RF MOSFETs in the presence of digital substrate noise",

abstract = "Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise.",

keywords = "Digital substrate noise, RF MOSFET, noise figure (NF), substrate noise, thermal noise",

author = "Park, {Chan Hyeong} and Yongho Oh and Rieh, {Jae Sung}",

note = "Funding Information: Manuscript received June 24, 2010; accepted August 04, 2010. Date of publication September 23, 2010; date of current version November 05, 2010. This work was supported by a research grant of Kwangwoon University in 2009 and by the NRF Grant funded by the Korea government (MEST) (2009-0086266). C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea (e-mail: [email protected]). Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2010.2068041 Fig. 1. Small-signal equivalent circuit of an RF MOSFET under digital substrate noise [6].",

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AU - Oh, Yongho

AU - Rieh, Jae Sung

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AB - Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise.

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Noise figure formulas of RF MOSFETs in the presence of digital substrate noise

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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