Noise figure formulas of RF MOSFETs in the presence of digital substrate noise

Chan Hyeong Park, Yongho Oh, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Noise figure (NF) formulas are presented for RF MOSFETs in the presence of digital substrate noise. When the digital substrate noise is much higher than the intrinsic MOSFET noise, simplified NF formulas can be obtained. For the case of which the digital substrate noise is comparable to the MOSFET thermal noise in magnitude, general NF expressions of RF MOSFETs with digital substrate noise are derived. Comparisons of the derived NF formulas and the experimental results are done showing good agreement between them for RF MOSFETs with digital substrate noise.

Original languageEnglish
Article number5582111
Pages (from-to)622-624
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number11
Publication statusPublished - 2010 Nov

Bibliographical note

Funding Information:
Manuscript received June 24, 2010; accepted August 04, 2010. Date of publication September 23, 2010; date of current version November 05, 2010. This work was supported by a research grant of Kwangwoon University in 2009 and by the NRF Grant funded by the Korea government (MEST) (2009-0086266). C. H. Park is with the Department of Electronics and Communications Engineering, Kwangwoon University, Seoul 139-701, Korea (e-mail: Y. Oh and J.-S. Rieh are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: Color versions of one or more of the figures in this letter are available online at Digital Object Identifier 10.1109/LMWC.2010.2068041 Fig. 1. Small-signal equivalent circuit of an RF MOSFET under digital substrate noise [6].


  • Digital substrate noise
  • noise figure (NF)
  • substrate noise
  • thermal noise

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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